{"title":"一种快速、低成本的TSV/TGV充填方法","authors":"Jiebin Gu, Bingjie Liu, Heng Yang, Xinxin Li","doi":"10.1109/CSTIC.2017.7919862","DOIUrl":null,"url":null,"abstract":"In this paper, we present an alloy via-filling method that does not need pre-metallization of via holes and can be realized on wafer level. Through-Silicon Via(TSV)/Through Glass Via(TGV) with different geometries can be filled simultaneously in few minutes, instead of few hours by electroplating. A specific equipment is made for the alloy via-filling method. The alloy TSV filling method presented in this paper has the potential for industrial applications.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"4 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A fast and low-cost TSV/TGV filling method\",\"authors\":\"Jiebin Gu, Bingjie Liu, Heng Yang, Xinxin Li\",\"doi\":\"10.1109/CSTIC.2017.7919862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present an alloy via-filling method that does not need pre-metallization of via holes and can be realized on wafer level. Through-Silicon Via(TSV)/Through Glass Via(TGV) with different geometries can be filled simultaneously in few minutes, instead of few hours by electroplating. A specific equipment is made for the alloy via-filling method. The alloy TSV filling method presented in this paper has the potential for industrial applications.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"4 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we present an alloy via-filling method that does not need pre-metallization of via holes and can be realized on wafer level. Through-Silicon Via(TSV)/Through Glass Via(TGV) with different geometries can be filled simultaneously in few minutes, instead of few hours by electroplating. A specific equipment is made for the alloy via-filling method. The alloy TSV filling method presented in this paper has the potential for industrial applications.