无载气等离子体增强CVD制备ZnO和tio2基半导体薄膜

Y. Lin, Y. M. Yang, X. W. Li, Z. Huang
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引用次数: 0

摘要

等离子体增强化学气相沉积(PECVD)技术是现代微电子技术中应用最广泛的技术之一,首次在低温无载气条件下制备了zno基和tio2基铁磁性半导体材料。zno基薄膜在室温下表现出优异的光致发光性能。通过超导量子干涉装置测量,所有掺杂氧化物薄膜都表现出室温铁磁行为。通过XRD、XPS、PL和FC/ZFC等微观结构分析和磁性分析结果,证实了磁性离子进入基体晶格,并在薄膜中排除了二次相。为了深入了解氧空位或氮注入对氧化物基半导体铁磁性的影响,将所有薄膜在900℃的N2环境中退火,或在350℃的NH3或O2等离子体中处理。结果表明空穴载流子或氧空位在氧化物基半导体中磁性离子之间的铁磁耦合中起着至关重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ZnO- and TiO2-Based Semiconductor Films Prepared by Plasma Enhanced CVD Without any Carrier Gas
Plasma enhanced chemical vapor deposition (PECVD), one of the most widely used techniques in modern microelectronics, is firstly employed to prepare ferromagnetic ZnO-based and TiO2-based magnetic semiconductors at low deposition temperature without any carrier gas. ZnO-based films show excellent photoluminescence at room temperature. All doped oxide films show room-temperature ferromagnetic behaviors by using superconducting quantum interference device measurements. Magnetic ions incorporating into host lattice and the exclusion of secondary phase in films are confirmed by microstructure analysis and magnetic results, such as XRD, XPS, PL and FC/ZFC. In order to gain insights into the effect of oxygen vacancies or nitrogen implantation on ferromagnetism of oxide-based semiconductors, all films were annealed in N2 ambience at 900 or treated in NH3 or O2 plasma at 350 . The results indicated the crucial role of hole-carriers or oxygenvacancies playing in the ferromagnetic coupling between magnetic ions in oxide-based semiconductors.
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