Mott绝缘子gata4se8的太赫兹驱动动力学

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2019-09-01 DOI:10.1109/IRMMW-THz.2019.8874120

E. Abreu, D. Babich, E. Janod, S. Houver, B. Corraze, L. Cario, S. Johnson

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引用次数: 0

摘要

GaTa4 Se8是一种已知的莫特绝缘体，当使用沉积在样品上的电极施加大于1 - 10 kV/cm的电场并持续几十微秒时，其电阻率会下降，从而表现出电莫特转变。在这里，我们证明了在不到一皮秒的时间内，这种材料的电阻率可以下降。这些动力学在高场太赫兹泵脉冲激发后发生，并持续几皮秒，远远超过泵脉冲的持续时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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THz Driven Dynamics in Mott Insulator GaTa4 Se8

GaTa4 Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1 – 10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.

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2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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