解决化学稳定材料和3D形状的CMP挑战

H. Morinaga
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引用次数: 0

摘要

为了将CMP技术扩展到新的应用领域,有必要开发针对各种材料和形状的抛光技术。为了提高化学稳定材料的材料去除率,重要的是1)提高磨料颗粒速度(相对于抛光物体)以最大限度地增加摩擦,2)通过控制表面电荷来增加工作(粘附/活性)颗粒的数量。为了精确抛光3D形状,抛光耗材(3D垫、磁性抛光浆、抛光剂)的设计和精确的压力控制是关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Solving CMP Challenges for Chemically Stable Materials and 3D Shapes
In order to expand the use of CMP technologies into new applications, it is necessary to develop polishing technologies for a diverse range of materials and shapes. To improve the material removal rate of chemically stable materials, it is important i) to increase the abrasive particle velocity (vs. polishing object) to maximize the friction, and ii) to increase the number of working (adhered/active) particles by controlling the surface charge. To polish 3D shape precisely, design of polishing consumables (3D pad, magnetic polish slurry, polishing compound) and accurate pressure control are the keys.
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