17.5dBm IIP3高线性全差分射频CMOS放大器

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117697

T. Yan, X. Shen, P. Jiang, J. J. Zhou

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引用次数: 0

摘要

介绍了一种覆盖UHF波段的高线性全差分射频CMOS放大器。提出了一种具有NMOS和PMOS差分对的新型结构，以抵消由一阶跨导导数(gm')和二阶跨导导数(gm')引起的IM3。在适当的直流工作点和宽高比下，RF CMOS放大器在1.8V电压电源的总电流消耗为2mA的情况下，实现了12.5dB噪声系数(NF)、10.5dB电压增益和17.5dBm输入三阶截距点(IIP3)。该放大器采用台积电0.18µm CMOS工艺设计。

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A 17.5dBm IIP3 high linear fully differential RF CMOS amplifier

A high linear fully differential RF CMOS amplifier covering UHF band is presented in this paper. A novel structure with both NMOS and PMOS differential pairs is proposed to cancel IM3 induced by 1st order derivative of transconductance (gm') and 2nd order derivative of transconductance (gm"). With appropriate DC operating points and aspect ratios, the RF CMOS amplifier achieves 12.5dB noise figure (NF), 10.5dB voltage gain and 17.5dBm input third order intercept point (IIP3) with total current consumption of 2mA from 1.8V voltage supply. The proposed amplifier is designed in TSMC 0.18µm CMOS process.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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