{"title":"一种用于微波测量半导体材料电导率的热控制装置","authors":"K. Oh, C. Ong, B. Tan","doi":"10.1088/0022-3735/22/10/014","DOIUrl":null,"url":null,"abstract":"A simple thermal control unit, together with a transmission microwave bridge have been constructed for the measurement of electrical conductivity at the X-band frequency of a silicon sample in the range 323 to 573 K. The temperature dependence of the conductivity and hence the band gap of Si were obtained. The technique may be used for other semiconducting materials.","PeriodicalId":16791,"journal":{"name":"Journal of Physics E: Scientific Instruments","volume":"9 1","pages":"876-879"},"PeriodicalIF":0.0000,"publicationDate":"1989-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A thermal control unit for microwave measurements of conductivity of a semiconducting material\",\"authors\":\"K. Oh, C. Ong, B. Tan\",\"doi\":\"10.1088/0022-3735/22/10/014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple thermal control unit, together with a transmission microwave bridge have been constructed for the measurement of electrical conductivity at the X-band frequency of a silicon sample in the range 323 to 573 K. The temperature dependence of the conductivity and hence the band gap of Si were obtained. The technique may be used for other semiconducting materials.\",\"PeriodicalId\":16791,\"journal\":{\"name\":\"Journal of Physics E: Scientific Instruments\",\"volume\":\"9 1\",\"pages\":\"876-879\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics E: Scientific Instruments\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0022-3735/22/10/014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics E: Scientific Instruments","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0022-3735/22/10/014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A thermal control unit for microwave measurements of conductivity of a semiconducting material
A simple thermal control unit, together with a transmission microwave bridge have been constructed for the measurement of electrical conductivity at the X-band frequency of a silicon sample in the range 323 to 573 K. The temperature dependence of the conductivity and hence the band gap of Si were obtained. The technique may be used for other semiconducting materials.
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