基于130nm SiGe BiCMOS的8-16GHz宽带压控振荡器

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660330

Zichen Ding, Zhiqun Li, Zhennan Li, Yan Yao

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引用次数: 0

摘要

提出了一种用于130纳米SiGe BiCMOS微波宽带频率源的8-16GHz低噪声压控振荡器(VCO)。采用四个窄带Colpitts振荡器和一个多路复用器(MUX)来实现具有宽带特性的VCO阵列。每个Colpitts VCO核心配备2bit电容开关，以扩展其调谐范围。采用可变偏置降低开关状态变化后的相位噪声。仿真结果表明，实际调谐范围为11.3 ~ 22.3 ghz，在100kHz偏置时相位噪声小于-87dBc/Hz，在1MHz偏置时相位噪声小于-107.2dBc/Hz。

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An 8-16GHz Wideband VCO in 130nm SiGe BiCMOS

This paper presents an 8-16GHz low-noise voltage-controlled oscillator (VCO) for microwave broadband frequency sources in 130nm SiGe BiCMOS. Four narrowband Colpitts oscillators and a multiplexer (MUX) are used to implement a VCO array with wide band feature. Each Colpitts VCO core is equipped 2bit capacitors switches to extend its tuning range. A variable bias is used to reduce phase noise after state of switches change. The simulation results show that the actual tuning range covers 11.3-22.3GHz, and the phase noise is less than -87dBc/Hz at 100kHz offset and less than -107.2dBc/Hz at 1MHz offset.

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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