一种用于2.4 ghz短距离无线通信的可调功率放大器,采用数字控制累加模式变容二极管阵列

Sanggil Kim, D. Im
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引用次数: 1

摘要

CMOS中最流行的可调谐电容器拓扑是模拟变容管和数字控制开关电容器阵列(SCA)。传统的模拟变容器在最小电容(Cmin)和最大电容(Cmax)状态下均具有较高的质量因子(g因子),且调谐范围宽,但由于其电压相关的非线性电容,其线性性能较差。对于数字控制开关电容阵列,虽然其线性度非常好,但其在Cmin状态下的g因子强烈依赖于p-井、深n-井和p-衬底之间的寄生结电容和衬底电阻造成的衬底损耗。为了克服模拟变容管和开关电容阵列的上述缺点,提出了一种数字控制二加权累加型变容管阵列(AVA)。仿真结果表明,在2.4 GHz频段,所提出的可调谐电容在所有状态下的g因子均大于60,调谐范围为3。基于逆变器的推挽功率放大器(PA)与采用所提出的可调谐电容的可调谐匹配网络(TMN)扩展了阻抗覆盖范围,在天线阻抗失配的最坏情况下保持输出功率大于0 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A tunable power amplifier employing digitally controlled accumulation-mode varactor array for 2.4-GHz short-range wireless communication
The most popular tunable capacitor topologies in CMOS are the analog varactor and digitally controlled switched capacitor array (SCA). The conventional analog varactor shows a high quality factor (g-factor) in both the minimum capacitance (Cmin) and the maximum capacitance (Cmax) states with a wide tuning range, but it has a poor linearity performance due to the voltage dependent nonlinear capacitance. In case of the digitally controlled switched capacitor array, while it shows a very good linearity, its g-factor in Cmin state is strongly dependent on the substrate loss by the parasitic junction capacitances between p-well, deep n-well, and p-substrate and the substrate resistance. To overcome the aforementioned drawbacks of the analog varactor and the switched capacitor array, the digitally controlled binary-weighted accumulation-mode varactor array (AVA) is proposed. In the simulation, at 2.4 GHz frequency band, the proposed tunable capacitor shows a g-factor of greater than 60 over all states and a tuning range of 3. The inverter-based push-pull power amplifier (PA) with the tunable matching network (TMN) employing the proposed tunable capacitor extends the impedance coverage maintaining the output power of greater than 0 dBm under the worst case for antenna impedance mismatch.
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