MEMS器件的位移分析

Ishak Ertugrul
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摘要

本文对微机电系统(MEMS)器件进行了位移分析。通过微器件的电流通过热膨胀将器件推向所需的距离,从而辐射出热能。膨胀的大小取决于流过器件的电流。利用所设计的模型,确定了MEMS器件位移所需的电流量。此外,计算了不同金属材料(银和金)和输入电位(0.4 V, 0.8 V和1.2 V)下微器件产生的位移。由于其高导电性,这些类型的材料在MEMS技术中通常是首选。分析研究结果表明,增加电压值会增加材料的位移。当施加1.2V电压时,银和金的最高位移值为;分别为6.45 μm、4.32 μm。结果表明,与金材料相比,银材料表现出明显的位移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Displacement Analysis of the MEMS Device
In this study, the displacement analysis of the microelectromechanical system (MEMS) device was performed. The current passing through the microdevice radiates heat energy as it pushes the device to the desired distance through thermal expansion. The amount of expansion varies depending on the current flowing through the device. With the designed model, the amount of current required for the displacement of the MEMS device is determined. In addition, the displacements produced in the microdevice for different metallic materials (silver and gold) and input potentials (0.4 V, 0.8 V, and 1.2 V) were calculated. These types of materials are frequently preferred in MEMS technology due to their high conductivity. Increasing the voltage value as a result of the analysis studies increased the displacement of the materials. When 1.2V voltage is applied, the highest displacement values for silver and gold are; 6.45 μm, 4.32 μm, respectively. According to the results, the silver material showed a significant displacement compared to gold material.
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