华夫:一种新的光电二极管几何形状,具有高效率和背面接触

Otto Leistiko, Microelectronics Centre
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引用次数: 10

摘要

利用各向异性蚀刻技术和先进的器件加工技术,可以微加工出具有独特性能的新型硅机械、电子和光学器件。本文介绍了采用这些工艺制备的一种新型光伏二极管的特点。该装置不仅效率高,而且两个触点都位于电池背面。第一批直径仅为50mm的器件质量相对较好,具有低漏电流(nA)、高击穿电压(80v)和低串联电阻(mohms)。在am1.5下测量的效率在12 - 15%之间,短路电流为25-30 mA/cm2,开路电压为0.58-0.6 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts
By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V.
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