用太赫兹光电导率测量方法测量了石墨烯在SiO2上的离子渗透率和界面掺杂

Xiaoyu Jia, Klaas-Jan Tielrooij, M. Bonn, Hai I. Wang
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引用次数: 0

摘要

石墨烯具有优异的电学和化学性能,广泛应用于各种电化学领域。石墨烯表面电解质的存在会影响石墨烯的电子特性,尤其是其导电性。尽管石墨烯在电化学应用中具有重要意义,但石墨烯-电解质相互作用的确切机制仍然难以捉摸。在这里,我们采用光泵太赫兹探针光谱作为一种无接触和全光的手段来研究阳离子对电解质中石墨烯电导率的影响。我们揭示了通过石墨烯的离子渗透性,导致二氧化硅支撑石墨烯的界面掺杂效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ionic permeability and interfacial doping of graphene on SiO2 measured with Terahertz photoconductivity measurements
Graphene has been widely used in various electrochemical applications owing to its outstanding electrical and chemical properties. The presence of electrolyte at the graphene surfaces affects graphene’s electronic properties, especially its electrical conductivity. The precise mechanism underlying the graphene-electrolyte interaction has remained elusive, despite the importance of graphene for electrochemical applications. Here, we employ optical-pump THz-probe spectroscopy as a contact-free and all-optical means to investigate the impact of cations on graphene conductivity in the electrolyte. We reveal ionic permeability though graphene, resulting in an interfacial doping effect in SiO2-supported graphene.
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