薄外延硅电池层电阻率影响的研究

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520514

O. Evrard, T. Vermeulen, J. Poortmans, M. Caymax, P. Laermans, J. Nijs, R. Mertens

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引用次数: 2

摘要

在高掺杂CZ衬底上生长具有不同电阻率的外延层，分别为0.2、0.5、1.0和2.5欧姆。Cm，以研究电阻率对太阳能电池特性的影响。对纹理层和非纹理层进行比较。测量了归一化am1.5照明下的I-V特性、暗I-V和光谱响应。在他们的研究范围内，效率和光产生的电流随着层电阻率的增加而增加。

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The study of the influence of the layer resistivity of thin epitaxial Si cells

Epitaxial layers on heavily doped CZ substrates were grown in an APCVD epitaxial system with different epitaxial layer resistivities: 0.2, 0.5, 1.0 and 2.5 ohm.cm, in order to investigate the influence of the resistivity on the solar cell characteristics. Textured and untextured layers were compared. I-V characteristics under normalised AM 1.5 illumination, dark I-V and spectral response were measured. The efficiencies and the photogenerated current were found to increase with increasing layer resistivities in the range of their investigations.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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