利用AlN薄膜体声谐振器的12E-2 x波段滤波器

M. Hara, T. Yokoyama, M. Ueda, Y. Satoh
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引用次数: 20

摘要

研制了一种用于x波段的氮化铝薄膜体声谐振器(FBAR)滤波器。FBAR在谐振器下方有一个气隙,可以在声学上与基板隔离,并且在x波段非常薄。FBAR具有两种结构特征:一种是牺牲层,使气隙非常薄,以防止谐振器在气隙边缘破裂;另一种是谐振器在薄膜的应力作用下变形成圆顶状,以保持气隙。制备的FBAR运行成功,keff 2为6.40%,共振Q为246,反共振Q为462。该滤波器的中心频率为9.07 GHz,分数带宽为3.1%,最小插入损耗为-1.7 dB,带外抑制为-21 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
12E-2 X-Band Filters Utilizing AlN Thin Film Bulk Acoustic Resonators
A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff 2 of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of -1.7 dB, and an out-of-band rejection of -21 dB.
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