嵌入式MRAM技术的最新进展及未来发展方向

2019 Symposium on VLSI Technology Pub Date : 2019-06-01 DOI:10.23919/VLSIT.2019.8776547

W. Gallagher, Eric Chien, Chiang Tien-Wei, Jian-Cheng Huang, Meng-Chun Shih, Wang Chia-Yu, C. Bair, George Lee, Y. Shih, Lee Chia-Fu, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang

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引用次数: 18

摘要

MRAM可以在先进的VLSI技术中扮演各种片上存储角色，从高保留率，具有焊接回流功能的非易失性存储器(NVM)到密集非易失性或高保留率的工作ram。本文描述了具有焊接回流功能的MRAM NVM的结果，以及在速度、功率和密度方面权衡高保留的扩展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent Progress and Next Directions for Embedded MRAM Technology

MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.

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2019 Symposium on VLSI Technology

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