峰值功率亚纳秒二极管抽运被动调q微芯片激光器

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1313830

Y. Lan, S.C. Wang, Y. Chen

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引用次数: 0

摘要

具有极短峰值功率脉冲的二极管泵浦被动调q固态激光器具有广泛的应用前景。本文提出了一种由涂覆的c切Nd:GdVO/sub 4/或Nd:YVO/sub 4/晶体和涂覆的Cr/sup 4+/:YAG晶体组成的谐振器。目前性能的研究表明，c切Nd:GdVO/sub 4/和Nd:YVO/sub 4/晶体是制备短脉冲(亚纳秒)和峰值功率激光器的理想材料。结果表明，在2 W泵浦功率下，c-cut Nd:GdVO/sub 4/可以产生17.8 nJ脉冲，脉冲重复率为13 kHz，脉冲持续时间为0.85 ns;在2.4 W泵浦功率下，c-cut Nd:YVO/sub 4/可以产生18 nJ脉冲，脉冲重复率为13.5 kHz，脉冲持续时间为0.85 ns。

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High-peak-power subnanosecond diode-pumped passively Q-switched microchip laser

Diode-pumped passively Q-switched solid-state laser with extremely short high-peak-power pulses are of potential interest for numerous applications. In this paper we present a resonator that is formed by a coated c-cut Nd:GdVO/sub 4/ or Nd:YVO/sub 4/ crystal and a coated Cr/sup 4+/:YAG crystal. The studies of the present performance indicate that c-cut Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ crystal are very convenient material for short pulse (sub-nanosecond) and high-peak power lasers. It is demonstrated that at 2 W pump power, 17.8 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13 kHz can be generated in the c-cut Nd:GdVO/sub 4/ and 18 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13.5 kHz at 2.4 W pump power in the c-cut Nd:YVO/sub 4/.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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