J. Sutter, P. Tockhorn, P. Wagner, K. Jäger, A. Al‐Ashouri, B. Stannowski, S. Albrecht, C. Becker
{"title":"周期性纳米结构钙钛矿/硅串联太阳能电池的功率转换效率超过26%","authors":"J. Sutter, P. Tockhorn, P. Wagner, K. Jäger, A. Al‐Ashouri, B. Stannowski, S. Albrecht, C. Becker","doi":"10.1109/PVSC43889.2021.9518715","DOIUrl":null,"url":null,"abstract":"The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"16 1","pages":"1034-1036"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Periodically Nanostructured Perovskite/Silicon Tandem Solar Cells with Power Conversion Efficiency Exceeding 26%\",\"authors\":\"J. Sutter, P. Tockhorn, P. Wagner, K. Jäger, A. Al‐Ashouri, B. Stannowski, S. Albrecht, C. Becker\",\"doi\":\"10.1109/PVSC43889.2021.9518715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.\",\"PeriodicalId\":6788,\"journal\":{\"name\":\"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"16 1\",\"pages\":\"1034-1036\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC43889.2021.9518715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC43889.2021.9518715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Periodically Nanostructured Perovskite/Silicon Tandem Solar Cells with Power Conversion Efficiency Exceeding 26%
The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.