Cu(In,Ga)Se/sub /薄膜及器件的室温ft发光分析

J. Webb, M. Contreras, R. Noufi
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引用次数: 0

摘要

作者报道了一种快速、方便的发光技术,用于多晶Cu(In,Ga)Se/sub 2/ (CIGS)薄膜和光伏(PV)器件的质量控制。利用傅立叶变换拉曼分光光度计,实现了发光分析的快速性和便捷性,该分光光度计工作在近红外(NIR)光谱区域,覆盖了CIGS的带隙和缺陷水平。通过对ft -拉曼分光光度计的微小修改,作者能够在室温下检测CIGS器件的光致发光(PL)和电致发光(EL)。FT-EL技术允许使用该设备在能量高达1.3 eV的情况下进行发光测量,而FT-PL技术仅限于能量低于1.15 eV。通过提高灵敏度和消除对样品冷却的需要,这种方法相对于类似的色散PL测量减少了一个数量级的测量时间。他们使用ft -拉曼分光光度计的光纤探针配件来证明样品可以在远程位置检查均匀性,例如在线使用FT-PL光谱。他们还使用显微镜附件获得了CIGS器件上直径约几十微米的可见变色区域的PL光谱,并表明这些区域发射PL的能量和强度明显低于器件附近的均匀区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Room-temperature FT-luminescence analysis of Cu(In,Ga)Se/sub 2/ films and devices
The authors report a rapid, convenient luminescence technique for quality control of polycrystalline Cu(In,Ga)Se/sub 2/ (CIGS) films and photovoltaic (PV) devices. The speed and convenience of the luminescence analyses were realized by using a Fourier transform (FT) Raman spectrophotometer which operates in the near-infrared (NIR) spectral region encompassing the band gap and defect levels of CIGS. With minor modifications to the FT-Raman spectrophotometer, the authors were able to detect both photoluminescence (PL) and electroluminescence (EL) from CIGS devices at room temperature. The FT-EL technique allows luminescence measurements to be made using this equipment at energies up to 1.3 eV, while the FT-PL technique is limited to energies below 1.15 eV. By increasing sensitivity and eliminating the need for sample cooling, this approach reduced the measurement time by an order of magnitude relative to comparable dispersive PL measurements. They used a fiberprobe accessory to the FT-Raman spectrophotometer to demonstrate that samples can be checked for uniformity at remote locations, e.g. online, using FT-PL spectroscopy. They also used a microscope accessory to obtain the PL spectra of visibly discolored regions some tens of microns in diameter on a CIGS device, and to show that these regions emit PL at significantly lower energy and intensity than nearby uniform regions of the device.
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