16纳米栅极平面CMOS与体finfet差分放大器动态特性的比较研究

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1109/ESCINANO.2010.5701053

Hui-Wen Cheng, Yiming Li

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引用次数: 1

摘要

比较了16nm平面CMOS和不同AR条件下FinFET差分放大器的性能。研究结果表明，与其他结构相比，FinFET具有优异的直流特性。利用FinFET还获得了具有更高增益的差分放大器。目前，我们正在研究器件可变性对差分放大器动态特性的影响。

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A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs' differential amplifier

The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellen DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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