InP薄膜的快速热低压(金属有机)化学气相沉积

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147451

A. Katz

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引用次数: 0

摘要

讨论了快速热低压金属有机化学气相沉积(RT-LPMOCVD)技术在生产inp基微电子器件金属触点所需的非半导体薄层材料沉积中的应用。沉积了介电膜(SiO/sub 2/)和半金属膜(TiN/sub x/)。这两个过程都是在低压(5-30 torr)、较低温度(350-550℃)和较短时间(1-200 s)下完成的，表现出快速的生长动力学和均匀的沉积膜形态。叙述了工艺参数对两种膜性能的影响，并确定了最佳沉积条件。利用RT-LPCVD-SiO/ sub2 /层的蚀刻图案，将TiN/sub x/与p-InGaAs层进行RT-LPMOCVD制备的触点表征为欧姆触点

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Rapid thermal low pressure (metallorganic) chemical vapor deposition of thin films onto InP

The application of the rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) technique to the deposition of non-semiconductor thin-layer materials necessary for producing metal contacts to InP-based microelectronic devices is discussed. Both dielectric (SiO/sub 2/) and semimetal (TiN/sub x/) films were deposited. The two processes were realized in low pressures (5-30 torr), relatively low temperatures (350-550 degrees C), and short durations (1-200 s), exhibiting rapid growth kinetics and uniform deposited film morphology. The influence of the process parameters on the two film properties is described, and optimum deposition conditions are identified. Contacts that were prepared by RT-LPMOCVD of the TiN/sub x/ onto p-InGaAs layer using etched patterns in RT-LPCVD-SiO/sub 2/ layer are characterized as ohmic contacts.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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