聚焦离子束蚀刻环形谐振腔在cvd生长的Ge-Sb-S薄膜中

C. C. Huang, Y. Ho, K. Knight, J. Rarity, D. Hewak
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引用次数: 0

摘要

聚焦离子束技术已被应用于锗锑硫薄膜的环形谐振器的制造。利用微拉曼、扫描电镜、能量色散x射线和紫外-可见-近红外光谱对cvd生长的Ge-Sb-S薄膜进行了表征,并对谐振腔的性能进行了评价。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films
Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterizatezed by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.
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