Г.О. Корнышов, Н.Ю. Гордеев, Ю.М. Шерняков, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, Максим Владимирович Максимов
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引用次数: 0
摘要
本文系统地研究了基于量子阱(2D)、量子点(0D)和过渡维量子阱点(0D/2D)的1−1.3 μ m InGaAs/GaAs激光器。在广泛的泵浦电流范围内,测量和分析了激光波长对层增益常数的依赖关系,该参数允许比较具有不同类型有源区域和各种波导设计的激光器。结果表明,量子阱点的最大光学增益显著提高,无外部谐振腔的边缘发射激光器的激光波长范围比基于量子阱和量子点的激光器更宽。
Связь длины волны и усиления в лазерах на квантовых ямах, точках и яма-точках
A systematic study of a series of InGaAs/GaAs lasers in the 1−1.3 µm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional(0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots.