浸镀法制备添加Pt的SnO2-x薄膜的气敏特性

Duk-Dong Lee, Wan-Young Chung
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引用次数: 60

摘要

研究了添加铂的SnO2-x薄膜。采用反应电子束蒸发法制备了SnO2 - x薄膜。将沉积膜浸入H2PtCl6·6H2O水溶液中进行热处理。利用化学分析电子能谱、俄歇电子能谱和x射线衍射对制备的薄膜的表面结构和组成进行了研究。研究了薄膜的电学性能以及Pt的加入对其气敏特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gas-sensing characteristics of SnO2—x thin film with added Pt fabricated by the dipping method

SnO2—x thin films with added platinum are studied. The SnO2—x thin films are prepared by reactive electron beam evaporation of sintered pellets of SnO2 powder. The deposited films are dipped into an aqueous solution of H2PtCl6·6H2O and heat treated. The surface structure and composition of the prepared films are investigated by electron spectroscopy for chemical analysis, Auger electron spectroscopy and X-ray diffractometry. The electrical properties of the thin films and the effect of Pt addition on the gas-sensing characteristics have also been investigated.

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