18nm SG隧道场效应晶体管的电位和电场模型

2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT) Pub Date : 2013-04-11 DOI:10.1109/ICEVENT.2013.6496580

T. S. Arun Samuel, N. Balamurugan

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引用次数: 0

摘要

本文提出了一种新的单栅绝缘子上硅隧道场效应晶体管(tfet)二维解析模型。利用抛物近似技术求解具有合适边界条件的二维泊松方程。导出了表面电位和电场的解析表达式。在尺寸为18nm的器件上验证了模型的有效性，并将分析结果与TCAD仿真结果进行了比较。

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Potential and electric field model for 18 nm SG tunnel field effect transistor

In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.

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2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)

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