用飞行时间和光谱响应测量研究非晶硅太阳能电池中不同组成的p/i结

F. Karg, K. Dietrich, W. Kusian, H. Kausche
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引用次数: 1

摘要

通过光谱响应和延迟场测量研究了具有碳或磷缓冲层的非晶p-SiC/Si异质结。两种缓冲类型都增强了接口处的载流子寿命和蓝色响应。补偿了交叉污染硼的负面影响,这是低蓝响应的主要原因。一个有效运行的缓冲层模型证明了碳缓冲层的长度与硼交叉污染之间的相关性。此外,界面寿命取决于沉积顺序。未掺杂的SiC沉积在a- si:H上的电子阱较浅,反之则显示出极低的界面态密度
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of variously composed p/i junctions in amorphous silicon solar cells by time of flight and spectral response measurements
Amorphous p-SiC/Si heterojunctions with carbon or phosphorus buffer layers were investigated by spectral response and delayed field measurements. Both buffer types enhance the carrier lifetime at the interface and the blue response. The compensate for the negative influence of cross-contaminated boron, the primary origin of low blue response. A model of a buffer layer conceived to operate efficiently demonstrated the correlation between the length of the carbon buffer layer and the boron cross contamination. In addition the interface lifetime depends on the deposition sequence. Deposition of undoped SiC onto a-Si:H is associated with shallow electron traps, while the reverse sequence shows a very low interface state density.<>
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