GaP/Si异质结太阳能电池:界面、掺杂和形态研究

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Pub Date : 2018-06-01 DOI:10.1109/PVSC.2018.8547704

R. Saive, Hal S. Emmer, Christopher T. Chen, Chaomin Zhang, C. Honsberg, H. Atwater

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引用次数: 1

摘要

本文报道了一种应用于硅异质结太阳能电池的GaP/Si界面的研究。我们使用x射线光电子能谱(XPS)和截面开尔文探针力显微镜(x-KPFM)分析了带对准。我们的测量结果显示，高导带偏移(0.9 eV)导致电子萃取中的屏障，我们通过x-KPFM进行了微观分解。XPS揭示了Si- ga键的存在，这解释了在GaP/Si异质结太阳能电池中观察到的导致低开路电压和低填充因子的界面偶极子。此外，我们还研究了Si和Mg掺杂后GaP的电子和形态变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

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