高频InP/InGaAsP埋置异质结构半导体激光器的新制备方法

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147310

R. Holmstrom, E. Meland, J. Schlafer, W. Powazinik

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摘要

一种允许可控制造埋藏异质结构(BH)激光器的工艺

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New fabrication method for high frequency InP/InGaAsP buried heterostructure semiconductor lasers

A process that permits the controllable fabrication of buried heterostructure (BH) lasers with <1.0 mu m wide active layers and 0.1-0.2 mu m of lateral cladding and achieves the high photon densities and low parasitics necessary for high resonance frequency and modulation bandwidth lasers is described. The process may be used with bulk heterostructure, quantum well, and distributed feedback (DFB) grated structures. Control of critical dimensions to +or-0.1 mu m can be realized using the process. The process development for fabrication of a 1.3 mu m or 1.5 mu m wavelength high frequency laser is discussed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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