{"title":"室温下制备的超低开关电压的高性能vox基忆阻器","authors":"M.Y. Wang, D. Wang, X.D. Huang","doi":"10.1109/NANO51122.2021.9514359","DOIUrl":null,"url":null,"abstract":"In this work, the Ti/VOx/ITO memristors fabricated at room temperature with self-current compliance characteristics are demonstrated. The devices exhibited excellent resistive switching behavior with ultralow programming voltages (as low as 17 mV) and good retention time (>104 s). In addition, low-power characteristic with 36.72 nW set power (2.16 µA@17 mV) and 2.74 µW reset power (17.1 µA@0.16 V) were obtained in these memristive devices, which makes them promising in the next-generation information storage and computing applications.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"158 1","pages":"468-469"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance VOx-based memristors with ultralow switching voltages prepared at room temperature\",\"authors\":\"M.Y. Wang, D. Wang, X.D. Huang\",\"doi\":\"10.1109/NANO51122.2021.9514359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the Ti/VOx/ITO memristors fabricated at room temperature with self-current compliance characteristics are demonstrated. The devices exhibited excellent resistive switching behavior with ultralow programming voltages (as low as 17 mV) and good retention time (>104 s). In addition, low-power characteristic with 36.72 nW set power (2.16 µA@17 mV) and 2.74 µW reset power (17.1 µA@0.16 V) were obtained in these memristive devices, which makes them promising in the next-generation information storage and computing applications.\",\"PeriodicalId\":6791,\"journal\":{\"name\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"volume\":\"158 1\",\"pages\":\"468-469\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO51122.2021.9514359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-performance VOx-based memristors with ultralow switching voltages prepared at room temperature
In this work, the Ti/VOx/ITO memristors fabricated at room temperature with self-current compliance characteristics are demonstrated. The devices exhibited excellent resistive switching behavior with ultralow programming voltages (as low as 17 mV) and good retention time (>104 s). In addition, low-power characteristic with 36.72 nW set power (2.16 µA@17 mV) and 2.74 µW reset power (17.1 µA@0.16 V) were obtained in these memristive devices, which makes them promising in the next-generation information storage and computing applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
