单掩模工艺中可预测的三维微流控通道制造

K. Gantz, M. Agah
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引用次数: 4

摘要

本文研究了掩膜几何图案对硅各向同性蚀刻后形成的沟槽尺寸的影响。这项研究是基于迄今为止最复杂的表面图案,由五个独立的几何变量组成。收集了来自180多个不同模式的数据,以检查每个参数对结果的影响。开发了两个基于langmuir的模型,将通道深度和宽度尺寸与暴露模式联系起来。这些新模型提供了设计复杂微流体网络的能力,仅使用单个掩膜,通道尺寸预测为其实际值的5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predictable Three-Dimensional Microfluidic Channel Fabrication in a Single-Mask Process
This paper presents the results of an investigation into the effect of geometrical patterns of the photomask on the dimensions of the trench that evolves after silicon isotropic etching. The study is based on the most complex surface pattern to date, composed of five independent geometric variables. Data from over 180 different patterns was collected to examine the influence of each parameter on the result. Two Langmuir-based models were developed relating the channel depth and width dimensions to the exposed pattern. These new models provide the capability to design complex microfluidic networks using only a single mask with channel dimensions predicted to 5% of their actual value.
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