在0.25 um GaN HEMT中实现200 ms /s 98 db信噪比跟踪保持

2015 IEEE Custom Integrated Circuits Conference (CICC) Pub Date : 2015-11-30 DOI:10.1109/CICC.2015.7338405

SungWon Chung, Hae-Seung Lee

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引用次数: 2

摘要

为了克服GaN HEMT漏电和肖特基二极管导通的设计挑战，设计了一种20 v伪差分输入摆幅的GaN跟踪保持(T/H)电路，该电路由一个非对称栅极器件和一个对称栅极器件组成。GaN T/H在200 MS/s时提供98 db信噪比，而功耗为195 mA。

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A 200-MS/s 98-dB SNR track-and-hold in 0.25-um GaN HEMT

In order to overcome the design challenges of GaN HEMT leakage and Schottky diode turn-on, a GaN track-and-hold (T/H) circuit with 20-V pseudo-differential input swing consists of an asymmetric gate device followed by a symmetric gate device. The GaN T/H provides 98-dB SNR at 200 MS/s while drawing 195 mA.

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2015 IEEE Custom Integrated Circuits Conference (CICC)

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