{"title":"宽电流范围和高顺应电压体驱动电流镜:简单和级联代码","authors":"K. Sooksood","doi":"10.1109/APCCAS.2016.7803943","DOIUrl":null,"url":null,"abstract":"This paper presents novel bulk-driven current mirror and bulk-driven cascode current mirror. Bulk-driven technique is employed to overcome a threshold voltage limitation. High accuracy transfer characteristic over wide current range is achieved through a negative feedback. The proposed circuits are designed and simulated with a 0.18 μm CMOS technology. They operate at 1 V power supply. The simulation results show the headroom voltage of 0.11 V and 0.16 V for the proposed bulk driven current mirror and bulk driven cascode current mirror, respectively.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Wide current range and high compliance-voltage bulk-driven current mirrors: Simple and cascode\",\"authors\":\"K. Sooksood\",\"doi\":\"10.1109/APCCAS.2016.7803943\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents novel bulk-driven current mirror and bulk-driven cascode current mirror. Bulk-driven technique is employed to overcome a threshold voltage limitation. High accuracy transfer characteristic over wide current range is achieved through a negative feedback. The proposed circuits are designed and simulated with a 0.18 μm CMOS technology. They operate at 1 V power supply. The simulation results show the headroom voltage of 0.11 V and 0.16 V for the proposed bulk driven current mirror and bulk driven cascode current mirror, respectively.\",\"PeriodicalId\":6495,\"journal\":{\"name\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2016.7803943\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7803943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide current range and high compliance-voltage bulk-driven current mirrors: Simple and cascode
This paper presents novel bulk-driven current mirror and bulk-driven cascode current mirror. Bulk-driven technique is employed to overcome a threshold voltage limitation. High accuracy transfer characteristic over wide current range is achieved through a negative feedback. The proposed circuits are designed and simulated with a 0.18 μm CMOS technology. They operate at 1 V power supply. The simulation results show the headroom voltage of 0.11 V and 0.16 V for the proposed bulk driven current mirror and bulk driven cascode current mirror, respectively.
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