{"title":"硅光子学中的泄漏损耗","authors":"N. Sun, Qieng-Hsiung Tsai, T. Shih, Po-Jul Chiang","doi":"10.1109/CLEOPR.2017.8118750","DOIUrl":null,"url":null,"abstract":"Silicon wayeguides fabricated on silicon-on-insulator wafers are leaky in nature. This fact puts a lower bound on the insulator thickness in silicon photonic structures as integrated with state-of-the-art electronic devices. We examine this constraint from the angle of finite gain compensation for leakage loss using m-V semiconductor gain media bonded to passive silicon waveguides.","PeriodicalId":6655,"journal":{"name":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","volume":"30 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Leakage loss in silicon photonics\",\"authors\":\"N. Sun, Qieng-Hsiung Tsai, T. Shih, Po-Jul Chiang\",\"doi\":\"10.1109/CLEOPR.2017.8118750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon wayeguides fabricated on silicon-on-insulator wafers are leaky in nature. This fact puts a lower bound on the insulator thickness in silicon photonic structures as integrated with state-of-the-art electronic devices. We examine this constraint from the angle of finite gain compensation for leakage loss using m-V semiconductor gain media bonded to passive silicon waveguides.\",\"PeriodicalId\":6655,\"journal\":{\"name\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"volume\":\"30 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.2017.8118750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.2017.8118750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon wayeguides fabricated on silicon-on-insulator wafers are leaky in nature. This fact puts a lower bound on the insulator thickness in silicon photonic structures as integrated with state-of-the-art electronic devices. We examine this constraint from the angle of finite gain compensation for leakage loss using m-V semiconductor gain media bonded to passive silicon waveguides.