Pankaj Kumar, Jithin M. Arvind, S. Mohan, S. Avasthi
{"title":"钢基体上TiN扩散阻挡层的SIMS表征","authors":"Pankaj Kumar, Jithin M. Arvind, S. Mohan, S. Avasthi","doi":"10.1109/icee44586.2018.8937939","DOIUrl":null,"url":null,"abstract":"Here we report experimentally determined diffusivity of Fe in TiN diffusion barrier layer. TiN films were deposited on mild steel substrates at room temperature. The samples were annealed at high temperatures in view of processes requiring high temperature such as GaAs thin film solar cells. SIMS was used to extract the diffusion coefficient for bulk diffusion and grain boundary diffusion. At 700°C, the effective diffusion coefficient was found to be 1.7 nm2/sec.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SIMS characterization of TiN diffusion barrier layer on steel substrate\",\"authors\":\"Pankaj Kumar, Jithin M. Arvind, S. Mohan, S. Avasthi\",\"doi\":\"10.1109/icee44586.2018.8937939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we report experimentally determined diffusivity of Fe in TiN diffusion barrier layer. TiN films were deposited on mild steel substrates at room temperature. The samples were annealed at high temperatures in view of processes requiring high temperature such as GaAs thin film solar cells. SIMS was used to extract the diffusion coefficient for bulk diffusion and grain boundary diffusion. At 700°C, the effective diffusion coefficient was found to be 1.7 nm2/sec.\",\"PeriodicalId\":6590,\"journal\":{\"name\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"20 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee44586.2018.8937939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SIMS characterization of TiN diffusion barrier layer on steel substrate
Here we report experimentally determined diffusivity of Fe in TiN diffusion barrier layer. TiN films were deposited on mild steel substrates at room temperature. The samples were annealed at high temperatures in view of processes requiring high temperature such as GaAs thin film solar cells. SIMS was used to extract the diffusion coefficient for bulk diffusion and grain boundary diffusion. At 700°C, the effective diffusion coefficient was found to be 1.7 nm2/sec.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
