一种研究传感器中SiC MESFET温度相关性能的理论方法。

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1) Pub Date : 2012-03-07 DOI:10.1109/ISPTS.2012.6260952

Sutanu Dutta

{"title":"一种研究传感器中SiC MESFET温度相关性能的理论方法。","authors":"Sutanu Dutta","doi":"10.1109/ISPTS.2012.6260952","DOIUrl":null,"url":null,"abstract":"A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"17 1","pages":"298-300"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.\",\"authors\":\"Sutanu Dutta\",\"doi\":\"10.1109/ISPTS.2012.6260952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.\",\"PeriodicalId\":6431,\"journal\":{\"name\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"volume\":\"17 1\",\"pages\":\"298-300\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPTS.2012.6260952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2012.6260952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

建立了SiC MESFET的温度依赖理论电流电压模型，研究了该器件在传感器中的性能。研究了在外加偏置、栅极长度和掺杂浓度等不同器件参数下漏极电流随器件温度的线性特性。计算了不同栅长和掺杂浓度下器件的温度灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.

A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

自引率

0.00%

发文量