Spin-orbit interaction and spintronics effects in semiconductor structures driven by interband coupling through optical phonon like displacements

In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures. a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall effect driven by coupling of fight and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians