用扫描探针对深亚微米集成电路进行电探测

K. Krieg, R. Qi, D. Thomson, G. Bridges
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引用次数: 1

摘要

介绍了一种用于深亚微米集成电路成像和实时信号测量的接触式电探头。与线探针类似,该探针在标准探针站上工作,但利用导电原子力显微镜微机械尖端快速测量表面形貌并获取实时高频信号。探头扫描系统可以对小至0.18微米的特征进行成像和定位,并且能够控制和保持接触力小于50纳牛顿,从而最大限度地减少电路损坏。探头尖端在尖端附近集成了有源电子器件,可实现300 MHz带宽测量,同时向被测量设备提供小于120 fF的高阻抗负载。介绍了0.25 /spl μ m互连和抛光器件的测量方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical probing of deep sub-micron ICs using scanning probes
A contact electrical probe for imaging and real-time signal measurement of deep sub-micron integrated circuits is presented. Similar to wire probers, the probe operates on a standard probe-station, but utilizes a conductive atomic force microscope micromachined tip to rapidly measure surface topography and acquire real-time high-frequency signals. The probe scanning system enables imaging and placement on features as small as 0.18 micron and is able to control and maintain the contact force to less than 50 nanonewton, thus minimizing circuit damage. The probe tip incorporates active electronics near the tip enabling 300 MHz bandwidth measurements while presenting a high impedance load, less than 120 fF, to the device being measured. Measurements of 0.25 /spl mu/m interconnects and polished devices is presented.
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