氧化铝镓薄膜及其器件的最新进展

IF 8.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
A. Saikumar, S. Nehate, K. Sundaram
{"title":"氧化铝镓薄膜及其器件的最新进展","authors":"A. Saikumar, S. Nehate, K. Sundaram","doi":"10.1080/10408436.2021.1922357","DOIUrl":null,"url":null,"abstract":"Abstract Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified. GRAPHICAL ABSTRACT","PeriodicalId":55203,"journal":{"name":"Critical Reviews in Solid State and Materials Sciences","volume":"300 1","pages":"538 - 569"},"PeriodicalIF":8.1000,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A review of recent developments in aluminum gallium oxide thin films and devices\",\"authors\":\"A. Saikumar, S. Nehate, K. Sundaram\",\"doi\":\"10.1080/10408436.2021.1922357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified. GRAPHICAL ABSTRACT\",\"PeriodicalId\":55203,\"journal\":{\"name\":\"Critical Reviews in Solid State and Materials Sciences\",\"volume\":\"300 1\",\"pages\":\"538 - 569\"},\"PeriodicalIF\":8.1000,\"publicationDate\":\"2021-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Critical Reviews in Solid State and Materials Sciences\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1080/10408436.2021.1922357\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Critical Reviews in Solid State and Materials Sciences","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/10408436.2021.1922357","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 14

摘要

摘要受氧化镓作为宽禁带半导体的成功启发,具有较高禁带值的氧化铝镓膜得到了广泛的研究。高带隙值的AGO薄膜成功地扩大了潜在的应用范围。在这篇综述中,我们全面总结了AGO的生长、性质和应用的最新进展。研究了沉积工艺及合成参数对AGO膜的影响。AGO薄膜的性能受生长技术和参数的影响,从而促进了AGO薄膜的应用。详细讨论了其电学性质、光学性质和形态学研究。最后,总结并展望未来。图形抽象
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A review of recent developments in aluminum gallium oxide thin films and devices
Abstract Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified. GRAPHICAL ABSTRACT
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
22.10
自引率
2.80%
发文量
0
审稿时长
3 months
期刊介绍: Critical Reviews in Solid State and Materials Sciences covers a wide range of topics including solid state materials properties, processing, and applications. The journal provides insights into the latest developments and understandings in these areas, with an emphasis on new and emerging theoretical and experimental topics. It encompasses disciplines such as condensed matter physics, physical chemistry, materials science, and electrical, chemical, and mechanical engineering. Additionally, cross-disciplinary engineering and science specialties are included in the scope of the journal.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信