2.4 GHz LNA全片ESD保护

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117571

H. Jin, S. Dong, M. Miao, J. Wu, F. Ma, J. K. Luo, J. Liou

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引用次数: 2

摘要

提出了2.4 GHz低噪声放大器(LNA)在0.18µm射频(RF) CMOS工艺下的全片静电放电(ESD)保护方法。对不同布局的互补可控硅(SCR)进行了评价，并与传统可控硅和二极管进行了比较。结果表明，岛式互补可控硅(MSCRIsland)结构具有最高的优值(FOM)，其RF I/O ESD保护通过6 kV人体模型(HBM)，同时该ESD保护在LNA中增加了0.28 dB噪声系数(NF)和178 fF电容。LNA电源钳位ESD保护还设计为RC触发各种器件，如NMOS、可控硅及其混合物。结果表明，RC触发NMOS-SCR具有较高的鲁棒性和导通速度，其功率箝位保护通过5 kV HBM。

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Whole chip ESD protection for 2.4 GHz LNA

Whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under 0.18 µm radio frequency (RF) CMOS process is proposed in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for I/O pad ESD protection is evaluated and compared with traditional SCR and diode. Results show that the island complementary SCR (MSCRIsland) structure has highest figure of merit (FOM) and its ESD protection for RF I/O passes 6 kV human body model (HBM), while extra 0.28 dB noise figure (NF) and 178 fF capacitance is introduced into LNA by this ESD protection. LNA power clamp ESD protection is also designed as RC triggered various devices, such as NMOS, SCR and their mixture. Results show that RC trigger NMOS-SCR has high robustness and turn-on speed and its power clamp protection passes 5 kV HBM.

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来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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