{"title":"中红外半导体二极管激光器GaSb上的稀氮化有源区","authors":"H. Nair, A. M. Crook, S. R. Bank","doi":"10.1364/CLEO_SI.2012.CTU2J.7","DOIUrl":null,"url":null,"abstract":"We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.","PeriodicalId":6442,"journal":{"name":"2012 Conference on Lasers and Electro-Optics (CLEO)","volume":"6 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dilute-nitride active regions on GaSb for mid-infrared semiconductor diode lasers\",\"authors\":\"H. Nair, A. M. Crook, S. R. Bank\",\"doi\":\"10.1364/CLEO_SI.2012.CTU2J.7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.\",\"PeriodicalId\":6442,\"journal\":{\"name\":\"2012 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"6 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/CLEO_SI.2012.CTU2J.7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEO_SI.2012.CTU2J.7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dilute-nitride active regions on GaSb for mid-infrared semiconductor diode lasers
We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.
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