一种0.6-1.2太赫兹单片成像阵列

2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) Pub Date : 2015-11-12 DOI:10.1109/IRMMW-THZ.2015.7327681

D. Corcos, N. Kaminski, D. Elad, T. Morf, Winnie Tatiana Silatsa Saha, U. Drechsler, L. Kull, A. Bischof, Y. Zha

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引用次数: 2

摘要

采用微加工SOI-CMOS工艺，设计并制作了带读出集成电路的19×8像素阵列。像素是天线耦合的MOSFET辐射热计，工作在室温下的0.6-1.2 THz宽波段。读出电路的特点列多路差分放大器，失调校准能力和斩波稳定。我们给出了读出电路模块的性能，以及像素的表征结果，证明了良好的检测灵敏度。

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A 0.6–1.2 THz monolithic imaging array

A 19×8 pixel array with a read-out integrated circuit was designed and fabricated in a micro-machined SOI-CMOS process. The pixels are antenna-coupled MOSFET bolometers operating at room temperature in a wide 0.6-1.2 THz band. The read-out circuit features column multiplexed differential amplifiers, offset calibration capability and chopper stabilization. We present the performance of the read-out circuit building blocks, as well as characterization results of the pixels, which demonstrate good detection sensitivity.

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来源期刊

2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)

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