衬底温度对射频磁控溅射制备氧化铟锡结构和光学性能的影响

Mohammad Farid Bin Mohd Nasir, M. H. Mamat
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引用次数: 0

摘要

本课题主要研究了不同衬底温度下氧化铟锡薄膜的结构和光学性能对氧化铟锡薄膜的影响。以室温、100°C、200°C、300°C和400°C为参数,改变衬底温度,优化薄膜质量。利用射频磁控溅射ITO (In-Sn, 90-10%)靶材在玻璃基板上沉积ITO薄膜。本项目分为薄膜制备、沉积和表征三个阶段。采用场发射扫描电镜(FESEM)、原子力显微镜(AFM)和紫外-可见-近红外(UV-Vis-NIR)分光光度计(Perkin Elmer Lambda 750)对薄膜的结构和光学性质进行了表征。所得的吸收系数光谱表明,所有薄膜在可见光(400-800nm)和近红外(> -800nm)范围内的吸收都很低,但在紫外范围内的吸收很高。样品在350 nm处透光率高于80%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of substrates temperature on structural and optical properties indium tin oxide prepared by RF magnetron sputtering
This project has been focused on the structural and optical properties respectively on the effect of indium tin oxide (ITO) thin films at different substrates temperature. The substrates temperature is varied at room temperature, 100°C, 200°C, 300°C and 400 °C as the parameter to optimize the thin films quality. ITO thin films were deposited onto the glass substrates using RF magnetron sputtering ITO (In-Sn, 90-10%) targets. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and ultraviolet-visible-near-infrared (UV-Vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for structural properties and optical properties. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range. The samples show higher transmittance of more than 80% at 350 nm.
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