制作对接耦合锗金属-半导体-金属波导光电探测器的自对准微键技术

2013 International Conference on Optical MEMS and Nanophotonics (OMN) Pub Date : 2013-11-11 DOI:10.1109/OMN.2013.6659054

Wei-ting Chen, C. Tseng, Ku-Hung Chen, N. Na, Ming-Chang M. Lee

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引用次数: 0

摘要

提出了一种利用自对准微键技术制备锗对接硅波导的新工艺。该光电探测器具有0.29 μA的低暗电流和1.01 a /W的高响应率，波长为1310 nm，偏置为-1 V。

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Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors

A novel process using self-aligned microbonding technique for Ge butt-coupled to silicon waveguides is presented. The photodetector features a low dark current of 0.29 μA and a high responsivity of 1.01 A/W at 1310 nm at -1 V bias.

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2013 International Conference on Optical MEMS and Nanophotonics (OMN)

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