低压化学气相沉积法生长Si δ掺杂InP的表征

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147298

M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle

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摘要

本文介绍了不同Si剂量(3*10/sup 11/ cm/sup -2/到7*10/sup 13/ cm/sup -2/)的原位平面掺杂低压金属有机化学气相沉积(LP-MOCVD)生长的InP脱膜的二次离子质谱(SIMS)和低温霍尔和舒布尼可夫·德·哈斯测量(SdH)的实验结果。输运测量提供了层中电子气体的量子限制的证据。δ掺杂层的电子密度在n/sub s/=6*10/sup 12/ cm/sup -2/时达到饱和，这取决于硅的剂量。设计参数(硅剂量)与测量和计算的电子子带性质进行了比较。描述了在4.2 K光激发下轻Si δ掺杂InP层的输运性质。

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Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition

Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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