甚高压(10kV)电容器的TDDB评估和建模

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173292

M. HigginsRobert

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引用次数: 5

摘要

非常厚(8um)硅基电介质的随时间介电击穿(TDDB)数据是在相对较低的磁场(≪5MV/cm)但极高的电压(高达4000V)下报告的。TDDB数据是在38A到8μm (80000 a)的介电厚度范围内采集的。与通常报道的薄膜TDDB结果一致，从测试数据中得出了与厚度无关的有效偶极矩为~ 13eA。TDDB数据也用于堆叠介质结构(氮化物/二氧化硅)，这些结构倾向于显示出强烈的极性依赖性，这取决于电子注入是进入氮化物层还是氧化物层。失效时间与极性有关，而有效偶极矩与极性无关。

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TDDB evaluations and modeling of very high-voltage (10kV) capacitors

Time-Dependent Dielectric Breakdown (TDDB) data for very thick (8um) silica-based dielectrics is reported at relatively low fields (≪ 5MV/cm) but at extremely high voltages (up to 4000V). TDDB data was taken across a wide range of dielectric thicknesses ranging from 38Å to 8μm (80,000Å). Consistent with the TDDB results generally reported for thin films, a thickness-independent effective dipole moment of ∼13eÅ was concluded from the testing data. TDDB data is also presented for stacked dielectrics structures (Nitride/Silica) which tend to show a strong polarity dependence, depending on whether electron injection is into the nitride or oxide layer. While the time to failure is polarity dependent, the effective dipole moment is independent of polarity.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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