红外太阳能电池中Si/sub -x/ Ge/sub - 1-x晶体的生长

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520202

J. Wollweber, D. Schulz, W. Schroder, N. Abrosimov

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摘要

单晶Si/sub -x/ Ge/sub -x/合金可能是红外太阳能电池应用的强大材料。与纯硅相比，Ruiz et al.(1994)表明，当x=0.5时，硅锗太阳能电池的效率应提高2%。然而，最佳效果是相当广泛的，在低锗含量的电池中可以达到最大的效益。另一方面，在整个组成范围内大量的SiGe块状晶体的可用性适合于研究SiGe合金的基本性能。本文重点介绍了两种方法制备sige单晶的新结果:(i)射频加热浮子区技术;(ii)传统的查克拉尔斯基法。

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The growth of Si/sub x/Ge/sub 1-x/-crystals for infrared solar cell applications

Monocrystalline Si/sub x/Ge/sub 1-x/ alloys may be a powerful material for infrared solar cell applications. In comparison with pure Si, Ruiz et al. (1994) have shown that SiGe-solar cells should increase their efficiency by 2% for x=0.5. However the optimum is quite broad and the maximum of this benefit may be reached with low Ge content cells. On the other hand the availability of a large quantity of SiGe-bulk crystals through the whole composition range is suitable for studies of fundamental properties of SiGe alloys. The present work focuses on new results in the growth of SiGe-single crystals prepared by two methods: (i) an RF-heated float zone-technique; and (ii) a conventional Czochralski-technique.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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