四分之一微米SIMOX-CMOS lvttl兼容门阵列，具有超过2,000 V的esd保护电路

Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference Pub Date : 1996-05-05 DOI:10.1109/CICC.1996.510511

Y. Ohtomo, T. Mizusawa, K. Nishimura, H. Sawada, M. Ino

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引用次数: 4

摘要

介绍了一种具有LVTTL接口的四分之一微米SIMOX-CMOS门阵列。SIMOX-CMOS门在1.2 V电源电压下具有与0.5-/spl mu/m CMOS门在3.3 V电源电压下相同的延迟，功耗降低87%。阵列中的接口电路将3.3 V的外部信号转换为2.0 V-1.2 V的内部信号，功率损失很小。该芯片的ESD保护电路在具有50纳米厚硅膜的先进SIMOX-CMOS中显示出超过2,000 V的ESD硬度。

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A quarter-micron SIMOX-CMOS LVTTL-compatible gate array with an over 2,000 V ESD-protection circuit

A quarter-micron SIMOX-CMOS gate array with an LVTTL interface is described. The SIMOX-CMOS gates have the same delay at 1.2 V of supply voltage as that of the gates in 0.5-/spl mu/m bulk CMOS at 3.3 V and reduce power consumption 87%. The interface circuits in the array convert 3.3 V external signal from/to 2.0 V-1.2 V internal signal with little power penalty. An ESD protection circuit for the chip shows over 2,000 V of ESD hardness in the advanced SIMOX-CMOS having 50-nm thick silicon film.

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来源期刊

Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference

CiteScore

3.80

自引率

0.00%

发文量