一个0.06mm2 8.9b ENOB 40MS/s的65nm CMOS流水线SAR ADC

M. Furuta, M. Nozawa, T. Itakura
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引用次数: 29

摘要

在10b SAR adc中,主要的设计挑战之一是用于实现电容器阵列的大量电容器。由于电容不匹配的设计约束和/或布局设计规则,应使用较大的单位电容。因此,总电容通常比kT/C噪声所要求的大得多。在[1]中,提出了一个10位SAR ADC,该ADC使用10fF的小单位电容实现了0.075mm2的电荷再分配架构,而由于使用了如此小的单位电容,SNDR很低。[2]中提出的电荷共享SAR通过减少所需的电容器数量,实现了相对较大的单位电容。然而,它需要一个大的(10pF) S/H电容器来精确操作。[3]中提出的ADC需要大型逻辑电路来实现复杂的校准。[4]中给出的转换器是一个流水线ADC。流水线结构克服了SAR的单位电容问题,但放大器的面积和功耗仍然很大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.06mm2 8.9b ENOB 40MS/s pipelined SAR ADC in 65nm CMOS
In 10b SAR ADCs, one of the major design challenges is the large number of capacitors for implementing the capacitor array. A large unit capacitance should be used due to the design constraint of capacitor mismatches and/or layout design rules. As a result, the total capacitance is typically much larger than what is required by kT/C noise. In [1], a 10-bit SAR ADC is presented that achieves an area of 0.075mm2 with a charge redistribution architecture using a small unit capacitance of 10fF, while SNDR is low becasue of using such a small unit capacitance. The charge-sharing SAR proposed in [2] allows a relatively large unit capacitance by reducing the required number of capacitors. However, it requires a large (10pF) S/H capacitor for precise operation. The ADC presented in [3] needs large logic circuits to implement a complex calibration. The converter presented in [4] is a pipelined ADC. The pipelined architecture overcomes the unit capacitance issue of SAR, but the area and the power consumption of the amplifiers are still large.
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