用复合矩形膜的载荷偏转法测量薄膜的机械性能

Osamu Tabata, Ken Kawahata, Susumu Sugiyama, Isemi Igarashi
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引用次数: 424

摘要

薄膜的内应力和杨氏模量是通过测量由薄膜制成的矩形膜的挠度与压力的关系来确定的。为了减小由于泊松比未知引起的杨氏模量测量误差,采用了2mm × 8mm的矩形膜。测量是用计算机测量系统进行的。对低压化学气相沉积(LPCVD)氮化硅薄膜进行了表征,发现其内应力为1.0 GPa,杨氏模量为290 GPa,表明矩形膜负载-偏转技术可用于测量LPCVD氮化硅薄膜的内应力和杨氏模量。利用这种复合膜技术,对LPCVD多晶硅膜和等离子体cvd氮化硅膜进行了表征。LPCVD多晶硅膜的内应力和杨氏模量分别为- 0.18 GPa和0.11 GPa,等离子体cvd氮化硅膜的内应力和杨氏模量分别为0.11 GPa和210 GPa。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanical property measurements of thin films using load-deflection of composite rectangular membranes

The internal stress and Young's modulus of thin films are determined by measuring the deflection versus pressure of rectangular membranes made of them. In order to reduce the measurement error for Young's modulus due to the unknown Poisson's ratio, a 2 mm × 8 mm rectangular membrane is adopted. Measurements are made by using a computerized measurement system. Low-pressure chemical vapor deposition (LPCVD) silicon nitride films are characterized and found to have an internal stress of 1.0 GPa and Young's moduls of 290 GPa, showing that the rectangular membrane load-deflection technique could be utilized to measure the internal stress and Young's modulus of films deposited onto LPCVD silicon nitride membranes. By using this composite membrane technique, a LPCVD polysilicon film and a plasma-CVD silicon nitride film are characterized. The internal stress and Young's modulus are found to be −0.18 GPa and 0.11 GPa for the LPCVD polysilicon film and 0.11 GPa and 210 GPa for the plasma-CVD silicon nitride film, respectively.

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