在InGaAs量子点的辐射时间和非辐射时间的温度关系

Физика и техника полупроводников Pub Date : 2022-01-01 DOI:10.21883/ftp.2022.10.53961.9963

А.М. Надточий, И.А. Мельниченко, К. А. Иванов, С.А. Минтаиров, Н. А. Калюжный, Максим Владимирович Максимов, Н.В. Крыжановская, А. Е. Жуков

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摘要

利用连续波模式和时间分辨率的光致发光光谱技术研究了InGaAs/GaAs量子阱点在10-300 K温度范围内的异质结构。得到的衰变时间被分成载流子寿命的辐射和非辐射分量。发现辐射寿命随温度升高呈指数增长，而非辐射寿命对温度的依赖性较弱。

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Температурные зависимости излучательного и безызлучательного времени жизни носителей в квантовых яма-точках InGaAs

Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10-300 K using photoluminescence spectroscopy in CW mode as well with time resolution. Obtained decay times were splitted into radiative and nonradiative components of carrier lifetime. It is found that radiative lifetime demonstrates exponential growth with temperature rise, while temperature dependence of nonradiative one is much weaker.

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Физика и техника полупроводников

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