采用0.13µm SiGe技术的220GHz频率四倍器设计

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660219

Genyin Ma, F. Meng

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引用次数: 0

摘要

本文提出了一种基于先进的130nmSiGe HBT工艺的220GHz四倍频器。该电路采用差分放大结构和有源平衡，减少了阻抗匹配网络的器件冗余。为了减小晶体管寄生电容的影响，提高输出功率，提出了1/4$\lambda$@220GHz谐波反射器。为了改善差分信号的幅相特性，引入了补偿电容技术。本设计的输出功率为-0.572dBm，带宽为19 GHz，直流功耗为0.14 W，芯片面积为0.203 mm2。

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Design of a 220GHz Frequency Quadrupler in 0.13 µ m SiGe Technology

This paper presents a 220GHz quadrupler based on the advanced 130nmSiGe HBT process. The circuit adopts differential amplifier structure and active balun to reduce device redundancy of impedance matching network. A 1/4$\lambda$@220GHz harmonic reflector is proposed to reduce the influence of transistor parasitic capacitance and improve the output power. Compensation capacitor technology is introduced to improve the amplitude and phase characteristics of differential signals. This design features an output power of -0.572dBm, a bandwidth of 19 GHz, consumes 0.14 W of dc power and occupies 0.203 mm2 of chip area.

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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