1.3 /spl mu/m CW GaInNAs VCSEL给出4.1 mW单横模功率

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1312198

P. Merlin, J. Hopkins, S. Calvez, H.D. Sun, M. Dawson, T. Jouhti, M. Pessa

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引用次数: 0

摘要

在本文中，我们演示了6 QW GaInNAs/GaAs VCSEL的光纤耦合二极管泵浦操作，其输出性能高达4.1 mW，在1290.7 nm处以10/spl度/C耦合到单模光纤中。激光发射温度可达95/spl℃，温度位移为0.1 nm/K。采用氮等离子体固体源MBE培养VSCEL结构。

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1.3 /spl mu/m CW GaInNAs VCSEL giving 4.1 mW single transverse mode power

In this paper, we have demonstrated fibre coupled-diode pumping operation of a six QW GaInNAs/GaAs VCSEL showing performance of up to 4.1 mW output coupled into a single-mode fibre at 10/spl deg/C at 1290.7 nm. Laser emission was observed up to a temperature of 95/spl deg/C, and the temperature shift is 0.1 nm/K. The VSCEL structure was grown by solid-source MBE using a nitrogen plasma.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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